Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/96513
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dc.titleEpitaxy barium ferrite thin films on LiTaO3 substrate
dc.contributor.authorFang, H.C.
dc.contributor.authorOng, C.K.
dc.contributor.authorXu, S.Y.
dc.contributor.authorTan, K.L.
dc.contributor.authorLim, S.L.
dc.contributor.authorLi, Y.
dc.contributor.authorLiu, J.M.
dc.date.accessioned2014-10-16T09:24:18Z
dc.date.available2014-10-16T09:24:18Z
dc.date.issued1999-08-15
dc.identifier.citationFang, H.C.,Ong, C.K.,Xu, S.Y.,Tan, K.L.,Lim, S.L.,Li, Y.,Liu, J.M. (1999-08-15). Epitaxy barium ferrite thin films on LiTaO3 substrate. Journal of Applied Physics 86 (4) : 2191-2195. ScholarBank@NUS Repository.
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96513
dc.description.abstractBarium hexaferrite (BaM) thin films were deposited on (0001) LiTaO3 substrates by pulsed laser deposition. Effects of the substrate temperature and oxygen gas pressure on the formation and quality of these films were studied. Films deposited at a substrate temperature of 800 °C and an oxygen pressure around 0.23 mbar showed the best c axis normal to the film plane with locked in-plane orientation. The saturation magnetization Ms and anisotropy field Ha measured by vibrating sample magnetometer were almost the same as those reported on bulk barium ferrite. Decreasing oxygen pressure hinders the formation of the Ba layer in BaM magnetoplumbite structure and gives rise to the spinel phase, which greatly decreases coercivity Hc of the films and finally destroys the whole BaM structure. Effects of the lattice mismatch and substrate-induced strains on the film structure were also studied. It was found that barium ferrite thin films grown on LiTaO3 substrates tend to choose a matching mode with compressional strains rather than shear strains. © 1999 American Institute of Physics.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentMATERIALS SCIENCE
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume86
dc.description.issue4
dc.description.page2191-2195
dc.description.codenJAPIA
dc.identifier.isiutNOT_IN_WOS
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