Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1467970
DC FieldValue
dc.titleEpitaxial Y-stabilized ZrO2 films on silicon: Dynamic growth process and interface structure
dc.contributor.authorWang, S.J.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-10-16T09:24:17Z
dc.date.available2014-10-16T09:24:17Z
dc.date.issued2002-04-08
dc.identifier.citationWang, S.J., Ong, C.K. (2002-04-08). Epitaxial Y-stabilized ZrO2 films on silicon: Dynamic growth process and interface structure. Applied Physics Letters 80 (14) : 2541-2543. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1467970
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96512
dc.description.abstractWe have studied the initial stage of the growth of yttria-stabilized zirconia (YSZ) films on natively oxidized (100) Si wafer by pulsed-laser deposition. X-ray photoelectron spectroscopy and high-resolution electron microscopy show that, for the first few monolayers of crystalline YSZ deposited on (100) Si, the dynamic processes appear to be the decomposition of SiO 2 to SiO, the formation of ZrO2, and the desorption of SiO. The native amorphous SiO2 layer is removed completely with the continued deposition of YSZ. The atomically sharp and commensurate YSZ/Si interface is suggested to have a sequence of Si-Si-O-Zr-O-. © 2002 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1467970
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.1467970
dc.description.sourcetitleApplied Physics Letters
dc.description.volume80
dc.description.issue14
dc.description.page2541-2543
dc.description.codenAPPLA
dc.identifier.isiut000174765900037
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

101
checked on Jul 1, 2022

WEB OF SCIENCETM
Citations

102
checked on Jul 1, 2022

Page view(s)

114
checked on Jun 23, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.