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|Title:||Epitaxial Y-stabilized ZrO2 films on silicon: Dynamic growth process and interface structure||Authors:||Wang, S.J.
|Issue Date:||8-Apr-2002||Citation:||Wang, S.J., Ong, C.K. (2002-04-08). Epitaxial Y-stabilized ZrO2 films on silicon: Dynamic growth process and interface structure. Applied Physics Letters 80 (14) : 2541-2543. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1467970||Abstract:||We have studied the initial stage of the growth of yttria-stabilized zirconia (YSZ) films on natively oxidized (100) Si wafer by pulsed-laser deposition. X-ray photoelectron spectroscopy and high-resolution electron microscopy show that, for the first few monolayers of crystalline YSZ deposited on (100) Si, the dynamic processes appear to be the decomposition of SiO 2 to SiO, the formation of ZrO2, and the desorption of SiO. The native amorphous SiO2 layer is removed completely with the continued deposition of YSZ. The atomically sharp and commensurate YSZ/Si interface is suggested to have a sequence of Si-Si-O-Zr-O-. © 2002 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/96512||ISSN:||00036951||DOI:||10.1063/1.1467970|
|Appears in Collections:||Staff Publications|
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