Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2736277
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dc.titleEpitaxial LaAl O3 thin film on silicon: Structure and electronic properties
dc.contributor.authorMi, Y.Y.
dc.contributor.authorYu, Z.
dc.contributor.authorWang, S.J.
dc.contributor.authorLim, P.C.
dc.contributor.authorFoo, Y.L.
dc.contributor.authorHuan, A.C.H.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-10-16T09:24:17Z
dc.date.available2014-10-16T09:24:17Z
dc.date.issued2007
dc.identifier.citationMi, Y.Y., Yu, Z., Wang, S.J., Lim, P.C., Foo, Y.L., Huan, A.C.H., Ong, C.K. (2007). Epitaxial LaAl O3 thin film on silicon: Structure and electronic properties. Applied Physics Letters 90 (18) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2736277
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96511
dc.description.abstractEpitaxial LaAl O3 films have been grown on Si (001) by molecular beam epitaxy with an ultrathin SrTi O3 seed layer. High resolution x-ray diffraction and transmission electron microscopy show the high quality epitaxial structure of LaAl O3 films, and the epitaxial relationship of LaAl O3 with Si is LaAl O3 (001) ∥Si (001) and LaAl O3 [100] ∥Si [110]. The band gap of epitaxial LaAl O3 films was measured to be 6.5±0.1 eV from O 1s loss spectra. Band offsets between crystalline LaAl O3 films and Si were determined to be partitioned equally with 2.86±0.05 eV for valence-band offset and 2.52±0.1 eV for conduction-band offset by using x-ray photoelectron spectroscopy. © 2007 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2736277
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.2736277
dc.description.sourcetitleApplied Physics Letters
dc.description.volume90
dc.description.issue18
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000246210000056
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