Please use this identifier to cite or link to this item: https://doi.org/10.1002/sia.1075
DC FieldValue
dc.titleEnvironmental dependence of thermal oxidation behaviour of silicon nanocrystallites
dc.contributor.authorZhu, Y.
dc.contributor.authorOng, P.P.
dc.date.accessioned2014-10-16T09:24:11Z
dc.date.available2014-10-16T09:24:11Z
dc.date.issued2001-06
dc.identifier.citationZhu, Y., Ong, P.P. (2001-06). Environmental dependence of thermal oxidation behaviour of silicon nanocrystallites. Surface and Interface Analysis 31 (6) : 471-474. ScholarBank@NUS Repository. https://doi.org/10.1002/sia.1075
dc.identifier.issn01422421
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96503
dc.description.abstractThree kinds of nanosilicon crystallites were prepared by different methods in high vacuum. All of them were composed of tiny silicon crystallites that initially were only mildly oxidized before annealing, but their behaviour upon annealing in a vacuum differed substantially, depending on the environment in which they resided. X-ray photoelectron spectroscopy analyses revealed that the unencapsulated nanoparticles tended to oxidize quite quickly, whereas the nanoparticles sandwiched between layers of Al2O3 matrices were oxidized very slowly even under intense annealing. In the zinc/silicon nanocrystalline mixture, oxidation of the Si0 state was even faster than that of the intermediate Si +1,+2 and +3 states. Both the stability and formation processes of the Si-O bonds in the partially oxidized states differed considerably with different environmental surroundings. However, in all cases, the Si-O bonds of the fully oxidized Si+4 state remained the most stable, to which the less oxidized states tend to gravitate eventually. © 2001 John Wiley & Sons, Ltd.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/sia.1075
dc.sourceScopus
dc.subjectOxidation
dc.subjectSilicon
dc.subjectX-ray photoelectron spectroscopy
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1002/sia.1075
dc.description.sourcetitleSurface and Interface Analysis
dc.description.volume31
dc.description.issue6
dc.description.page471-474
dc.description.codenSIAND
dc.identifier.isiut000169421400006
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