Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1417978
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dc.titleEnhancement Effect of C40 TiSi2 on the C54 Phase Formation
dc.contributor.authorChen, S.Y.
dc.contributor.authorShen, Z.X.
dc.contributor.authorSee, A.K.
dc.contributor.authorChan, L.H.
dc.date.accessioned2014-10-16T09:23:49Z
dc.date.available2014-10-16T09:23:49Z
dc.date.issued2001
dc.identifier.citationChen, S.Y., Shen, Z.X., See, A.K., Chan, L.H. (2001). Enhancement Effect of C40 TiSi2 on the C54 Phase Formation. Journal of the Electrochemical Society 148 (12) : g734-g737. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1417978
dc.identifier.issn00134651
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96470
dc.description.abstractWe report on the formation of a new material, C40 TiSi2, using pulsed laser annealing. On the basis of this laser-induced C40 TiSi2, the growth of the technologically important C54 phase is significantly promoted and can be accomplished with a subsequent rapid thermal anneal or furnace annealing at temperatures far below that for the normal C54 formation. The undesirable C49 TiSi2 is completely bypassed. C40 TiSi2 can also be easily transformed to the C54 phase with thermal treatments and result in the formation of a pure C54 TiSi2 layer. The synthesis of C40 phase without the additional refractory metals and its promotion effect on the C54 phase formation have great potential for applications in the integrated circuit industry for 0.10 μm technology node and beyond. © 2001 The Electrochemical Society. [DOI: 10.1149/1.1417978] All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.1417978
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1149/1.1417978
dc.description.sourcetitleJournal of the Electrochemical Society
dc.description.volume148
dc.description.issue12
dc.description.pageg734-g737
dc.description.codenJESOA
dc.identifier.isiut000172166800044
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