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|Title:||Energy-band alignments at LaAlO3 and Ge interfaces||Authors:||Mi, Y.Y.
|Issue Date:||2006||Citation:||Mi, Y.Y., Wang, S.J., Chai, J.W., Pan, J.S., Huan, A.C.H., Ning, M., Ong, C.K. (2006). Energy-band alignments at LaAlO3 and Ge interfaces. Applied Physics Letters 89 (20) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2387986||Abstract:||The energy-band alignments for LaAl O3 films on p-Ge (001) with and without Ge Ox Ny interfacial layer have been studied using photoemission spectroscopy. The valence-band offsets at LaAl O3 Ge Ox Ny Ge and LaAl O3 Ge interfaces were measured to be 2.70 and 3.06 eV, respectively. The effect of interfacial Ge Ox Ny layer on the band alignments is attributed to the modification of interface dipoles. The conduction-band offsets at LaAl O3 Si (001) and LaAl O3 Ge interfaces are found to have the same value of 2.25±0.05 eV, where the shift of valence-band top accounts for the difference in the energy-band alignment at two interfaces. © 2006 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/96457||ISSN:||00036951||DOI:||10.1063/1.2387986|
|Appears in Collections:||Staff Publications|
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