Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jpcs.2012.05.015
DC FieldValue
dc.titleEndoepitaxial growth of hexagonal-Fe 13Ge 8 islands on Cubic-Ge(001)
dc.contributor.authorLi, Z.-P.
dc.contributor.authorTok, E.S.
dc.contributor.authorFoo, Y.L.
dc.date.accessioned2014-10-16T09:23:35Z
dc.date.available2014-10-16T09:23:35Z
dc.date.issued2012-10
dc.identifier.citationLi, Z.-P., Tok, E.S., Foo, Y.L. (2012-10). Endoepitaxial growth of hexagonal-Fe 13Ge 8 islands on Cubic-Ge(001). Journal of Physics and Chemistry of Solids 73 (10) : 1213-1217. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jpcs.2012.05.015
dc.identifier.issn00223697
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96452
dc.description.abstractThe growth and shape evolution of epitaxial Fe 13Ge 8 (hexagonal lattice) islands on single crystal Ge(001) (cubic lattice) substrate was observed in real time using an in situ ultra-high vacuum transmission electron microscope (TEM). Post-deposition high-resolution TEM in conjunction with stereographic projection enabled the identification of the interface structure between the Fe 13Ge 8 islands and the Ge substrate. Only one low-energy coherent interface formed via Fe 13Ge 8 islands growing into the substrate along the inclined Ge(111) plane. This indicates that minimization of net interfacial energy is the driving force for hexagonal Fe 13Ge 8 islands formation on Ge(001). © 2012 Elsevier Ltd.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jpcs.2012.05.015
dc.sourceScopus
dc.subjectA. Interfaces
dc.subjectA. Nanostructure
dc.subjectB. Epitaxial growth
dc.subjectC. Electron microscopy
dc.subjectD. Diffusion
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/j.jpcs.2012.05.015
dc.description.sourcetitleJournal of Physics and Chemistry of Solids
dc.description.volume73
dc.description.issue10
dc.description.page1213-1217
dc.description.codenJPCSA
dc.identifier.isiut000306617300003
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