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|Title:||Endoepitaxial growth of hexagonal-Fe 13Ge 8 islands on Cubic-Ge(001)||Authors:||Li, Z.-P.
B. Epitaxial growth
C. Electron microscopy
|Issue Date:||Oct-2012||Citation:||Li, Z.-P., Tok, E.S., Foo, Y.L. (2012-10). Endoepitaxial growth of hexagonal-Fe 13Ge 8 islands on Cubic-Ge(001). Journal of Physics and Chemistry of Solids 73 (10) : 1213-1217. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jpcs.2012.05.015||Abstract:||The growth and shape evolution of epitaxial Fe 13Ge 8 (hexagonal lattice) islands on single crystal Ge(001) (cubic lattice) substrate was observed in real time using an in situ ultra-high vacuum transmission electron microscope (TEM). Post-deposition high-resolution TEM in conjunction with stereographic projection enabled the identification of the interface structure between the Fe 13Ge 8 islands and the Ge substrate. Only one low-energy coherent interface formed via Fe 13Ge 8 islands growing into the substrate along the inclined Ge(111) plane. This indicates that minimization of net interfacial energy is the driving force for hexagonal Fe 13Ge 8 islands formation on Ge(001). © 2012 Elsevier Ltd.||Source Title:||Journal of Physics and Chemistry of Solids||URI:||http://scholarbank.nus.edu.sg/handle/10635/96452||ISSN:||00223697||DOI:||10.1016/j.jpcs.2012.05.015|
|Appears in Collections:||Staff Publications|
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