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https://doi.org/10.1016/j.jpcs.2012.05.015
| Title: | Endoepitaxial growth of hexagonal-Fe 13Ge 8 islands on Cubic-Ge(001) | Authors: | Li, Z.-P. Tok, E.S. Foo, Y.L. |
Keywords: | A. Interfaces A. Nanostructure B. Epitaxial growth C. Electron microscopy D. Diffusion |
Issue Date: | Oct-2012 | Citation: | Li, Z.-P., Tok, E.S., Foo, Y.L. (2012-10). Endoepitaxial growth of hexagonal-Fe 13Ge 8 islands on Cubic-Ge(001). Journal of Physics and Chemistry of Solids 73 (10) : 1213-1217. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jpcs.2012.05.015 | Abstract: | The growth and shape evolution of epitaxial Fe 13Ge 8 (hexagonal lattice) islands on single crystal Ge(001) (cubic lattice) substrate was observed in real time using an in situ ultra-high vacuum transmission electron microscope (TEM). Post-deposition high-resolution TEM in conjunction with stereographic projection enabled the identification of the interface structure between the Fe 13Ge 8 islands and the Ge substrate. Only one low-energy coherent interface formed via Fe 13Ge 8 islands growing into the substrate along the inclined Ge(111) plane. This indicates that minimization of net interfacial energy is the driving force for hexagonal Fe 13Ge 8 islands formation on Ge(001). © 2012 Elsevier Ltd. | Source Title: | Journal of Physics and Chemistry of Solids | URI: | http://scholarbank.nus.edu.sg/handle/10635/96452 | ISSN: | 00223697 | DOI: | 10.1016/j.jpcs.2012.05.015 |
| Appears in Collections: | Staff Publications |
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