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Title: Elimination of O2 plasma damage of low-k methyl silsesquioxane film by As implantation
Authors: Wang, C.Y.
Zheng, J.Z.
Shen, Z.X. 
Lin, Y.
Wee, A.T.S. 
Keywords: Dielectrics
Fourier-transform infrared spectroscopy
Ion implantation
Secondary ion mass spectrometry
Issue Date: 1-Nov-2001
Citation: Wang, C.Y., Zheng, J.Z., Shen, Z.X., Lin, Y., Wee, A.T.S. (2001-11-01). Elimination of O2 plasma damage of low-k methyl silsesquioxane film by As implantation. Thin Solid Films 397 (1-2) : 90-94. ScholarBank@NUS Repository.
Abstract: In this paper, we discuss the effects of arsenic implantation on methyl silsesquioxane (MSQ) film properties, in particular the resistance of MSQ films to O2 plasma damage. Fourier-transform infrared spectroscopy (FTIR), secondary ion mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS) were used to study structural and compositional changes in As-implanted MSQ samples with and without exposure to O2 plasma. Ellipsometry was used to measure the refractive index and thickness of the As-implanted samples. C-V measurements were performed to obtain dielectric constants of the samples. Our results show that after As implantation, carbon bonds in the MSQ films are broken, and hence change the structure of the MSQ. After bond breaking, carbon remains in the MSQ films as shown in the SIMS profiling, and the carbon atoms/ions are in an amorphous or unbonded state instead of bonding with Si, as observed from the XPS results. It is proposed that these carbon atoms/ions are trapped in a dense O-Si-O network and no longer react with oxygen. Thus, the structurally changed MSQ material has an increased resistance to O2 plasma; however, these films also show an increase in the dielectric constant. © 2001 Elsevier Science B.V. All rights reserved.
Source Title: Thin Solid Films
ISSN: 00406090
DOI: 10.1016/S0040-6090(01)01401-8
Appears in Collections:Staff Publications

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