Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.50.5352
DC FieldValue
dc.titleElectronic structure of the Si(100) c(4×2) and p(2×2) surfaces
dc.contributor.authorLow, K.C.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-10-16T09:23:23Z
dc.date.available2014-10-16T09:23:23Z
dc.date.issued1994
dc.identifier.citationLow, K.C., Ong, C.K. (1994). Electronic structure of the Si(100) c(4×2) and p(2×2) surfaces. Physical Review B 50 (8) : 5352-5357. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.50.5352
dc.identifier.issn01631829
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96434
dc.description.abstractWe present a theoretical study of the geometric and electronic structures of the Si(100) surface. The calculations are performed at the parametrized tight-binding molecular-dynamics level using a computation cell consisting of five surface layers with 32 atoms on each layer. The p(2×2) and c(4×2) surfaces are found to be equally likely to have ground-state structures. The surface states are determined based on the optimized geometric structure of p(2×2) and c(4×2). The results are compared with available experimental data and previous calculations. © 1994 The American Physical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1103/PhysRevB.50.5352
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1103/PhysRevB.50.5352
dc.description.sourcetitlePhysical Review B
dc.description.volume50
dc.description.issue8
dc.description.page5352-5357
dc.identifier.isiutA1994PG28300038
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

17
checked on Sep 15, 2019

WEB OF SCIENCETM
Citations

17
checked on Sep 6, 2019

Page view(s)

37
checked on Sep 7, 2019

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.