Please use this identifier to cite or link to this item:
|Title:||Electronic structure of the Si(100) c(4×2) and p(2×2) surfaces||Authors:||Low, K.C.
|Issue Date:||1994||Citation:||Low, K.C., Ong, C.K. (1994). Electronic structure of the Si(100) c(4×2) and p(2×2) surfaces. Physical Review B 50 (8) : 5352-5357. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.50.5352||Abstract:||We present a theoretical study of the geometric and electronic structures of the Si(100) surface. The calculations are performed at the parametrized tight-binding molecular-dynamics level using a computation cell consisting of five surface layers with 32 atoms on each layer. The p(2×2) and c(4×2) surfaces are found to be equally likely to have ground-state structures. The surface states are determined based on the optimized geometric structure of p(2×2) and c(4×2). The results are compared with available experimental data and previous calculations. © 1994 The American Physical Society.||Source Title:||Physical Review B||URI:||http://scholarbank.nus.edu.sg/handle/10635/96434||ISSN:||01631829||DOI:||10.1103/PhysRevB.50.5352|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.