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|Title:||Electronic structure of the Si(100) c(4×2) and p(2×2) surfaces||Authors:||Low, K.C.
|Issue Date:||1994||Citation:||Low, K.C., Ong, C.K. (1994). Electronic structure of the Si(100) c(4×2) and p(2×2) surfaces. Physical Review B 50 (8) : 5352-5357. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.50.5352||Abstract:||We present a theoretical study of the geometric and electronic structures of the Si(100) surface. The calculations are performed at the parametrized tight-binding molecular-dynamics level using a computation cell consisting of five surface layers with 32 atoms on each layer. The p(2×2) and c(4×2) surfaces are found to be equally likely to have ground-state structures. The surface states are determined based on the optimized geometric structure of p(2×2) and c(4×2). The results are compared with available experimental data and previous calculations. © 1994 The American Physical Society.||Source Title:||Physical Review B||URI:||http://scholarbank.nus.edu.sg/handle/10635/96434||ISSN:||01631829||DOI:||10.1103/PhysRevB.50.5352|
|Appears in Collections:||Staff Publications|
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