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|Title:||Electronic structure of the reconstructed InP(100) surface||Authors:||Chan, B.C.
|Issue Date:||1991||Citation:||Chan, B.C.,Ong, C.K. (1991). Electronic structure of the reconstructed InP(100) surface. Journal of Physics and Chemistry of Solids 52 (5) : 699-703. ScholarBank@NUS Repository.||Abstract:||The Chadi total energy algorithm was extended to perform tight binding calculations on the InP(100) surface. The tight binding parameters for the In-P interactions were determined in the usual way and those for the In-In interactions obtained from the Harrison universal parameter scheme. From considerations of the total energy, we found that 2 × 2A and 4 × 2 asymmetrical dimer structures are equally probable. However, from the comparison of the position of filled and unfilled surface states with the experimental value, we conclude that the 4 × 2 structure could be the optimum dimerized structure on the InP(100) surface. © 1991.||Source Title:||Journal of Physics and Chemistry of Solids||URI:||http://scholarbank.nus.edu.sg/handle/10635/96433||ISSN:||00223697|
|Appears in Collections:||Staff Publications|
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