Please use this identifier to cite or link to this item: https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-D
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dc.titleElectronic properties of CsSnBr3: Studies by experiment and theory
dc.contributor.authorZheng, J.-C.
dc.contributor.authorHuan, C.H.A.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorKuok, M.H.
dc.date.accessioned2014-10-16T09:23:18Z
dc.date.available2014-10-16T09:23:18Z
dc.date.issued1999
dc.identifier.citationZheng, J.-C.,Huan, C.H.A.,Wee, A.T.S.,Kuok, M.H. (1999). Electronic properties of CsSnBr3: Studies by experiment and theory. Surface and Interface Analysis 28 (1) : 81-83. ScholarBank@NUS Repository. <a href="https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-D" target="_blank">https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-D</a>
dc.identifier.issn01422421
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96426
dc.description.abstractIn this paper, the band structure of cubic and tetragonal phases of CsSnBr3 has been investigated by temperature-dependent UPS and XPS in conjunction with ab initio calculations. The calculated results show that when CsSnBr3 changes from a cubic phase to a tetragonal phase, the conduction and valence bands show slight changes accordingly. The density of states of Br (4s and 4p) in the valence band increases with the phase transition from cubic to tetragonal, whereas those of Cs and Sn show almost no changes. Both cubic and tetragonal phases of CsSnBr3 show semiconductor character with bandgaps near the Fermi levels. The bandgap of the cubic phase at R k-point is calculated to be 0.42 eV, whereas those of the tetragonal phase at the A k-point are 0.41, 0.40 and 0.35 eV for c/a = 1.01, c/a = 1.02 and c/a = 1.04, respectively. The calculated results are in agreement with UPS and XPS measurements, and indicate direct correlation between the electronic structure and structural phase transitions.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-D
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-D
dc.description.sourcetitleSurface and Interface Analysis
dc.description.volume28
dc.description.issue1
dc.description.page81-83
dc.description.codenSIAND
dc.identifier.isiutNOT_IN_WOS
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