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|Title:||Electronic and positron properties of zinc-blende structure of GaN, AlN, and their alloy Ga1-xAlxN||Authors:||Al-Douri, Y.||Issue Date:||15-Jun-2003||Citation:||Al-Douri, Y. (2003-06-15). Electronic and positron properties of zinc-blende structure of GaN, AlN, and their alloy Ga1-xAlxN. Journal of Applied Physics 93 (12) : 9730-9736. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1573739||Abstract:||The empirical pseudopotential method was used to investigate the electronic and positron band structures and charge densities of GaN, AlN and their alloy in the zinc-blende structure. For the ternary alloy Ga1-xAlxN, the virtual crystal approximation was coupled with the pseudopotential method. The angular correlation of the positron annihilation radiation along with the different crystallographic directions in the crystals were also calculated.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/96419||ISSN:||00218979||DOI:||10.1063/1.1573739|
|Appears in Collections:||Staff Publications|
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