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|Title:||Electron tunneling through ultrathin boron nitride crystalline barriers||Authors:||Britnell, L.
Castro Neto, A.H.
|Issue Date:||14-Mar-2012||Citation:||Britnell, L., Gorbachev, R.V., Jalil, R., Belle, B.D., Schedin, F., Katsnelson, M.I., Eaves, L., Morozov, S.V., Mayorov, A.S., Peres, N.M.R., Castro Neto, A.H., Leist, J., Geim, A.K., Ponomarenko, L.A., Novoselov, K.S. (2012-03-14). Electron tunneling through ultrathin boron nitride crystalline barriers. Nano Letters 12 (3) : 1707-1710. ScholarBank@NUS Repository. https://doi.org/10.1021/nl3002205||Abstract:||We investigate the electronic properties of ultrathin hexagonal boron nitride (h-BN) crystalline layers with different conducting materials (graphite, graphene, and gold) on either side of the barrier layer. The tunnel current depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field. It offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel. © 2012 American Chemical Society.||Source Title:||Nano Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/96414||ISSN:||15306984||DOI:||10.1021/nl3002205|
|Appears in Collections:||Staff Publications|
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