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Title: Electron tunneling through ultrathin boron nitride crystalline barriers
Authors: Britnell, L.
Gorbachev, R.V.
Jalil, R.
Belle, B.D.
Schedin, F.
Katsnelson, M.I.
Eaves, L.
Morozov, S.V.
Mayorov, A.S.
Peres, N.M.R.
Castro Neto, A.H. 
Leist, J.
Geim, A.K.
Ponomarenko, L.A.
Novoselov, K.S.
Keywords: boron nitride
conductive AFM
Electron tunneling
Issue Date: 14-Mar-2012
Citation: Britnell, L., Gorbachev, R.V., Jalil, R., Belle, B.D., Schedin, F., Katsnelson, M.I., Eaves, L., Morozov, S.V., Mayorov, A.S., Peres, N.M.R., Castro Neto, A.H., Leist, J., Geim, A.K., Ponomarenko, L.A., Novoselov, K.S. (2012-03-14). Electron tunneling through ultrathin boron nitride crystalline barriers. Nano Letters 12 (3) : 1707-1710. ScholarBank@NUS Repository.
Abstract: We investigate the electronic properties of ultrathin hexagonal boron nitride (h-BN) crystalline layers with different conducting materials (graphite, graphene, and gold) on either side of the barrier layer. The tunnel current depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field. It offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel. © 2012 American Chemical Society.
Source Title: Nano Letters
ISSN: 15306984
DOI: 10.1021/nl3002205
Appears in Collections:Staff Publications

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