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Title: | Electron tunneling through ultrathin boron nitride crystalline barriers | Authors: | Britnell, L. Gorbachev, R.V. Jalil, R. Belle, B.D. Schedin, F. Katsnelson, M.I. Eaves, L. Morozov, S.V. Mayorov, A.S. Peres, N.M.R. Castro Neto, A.H. Leist, J. Geim, A.K. Ponomarenko, L.A. Novoselov, K.S. |
Keywords: | boron nitride conductive AFM Electron tunneling grapheme ultrathin |
Issue Date: | 14-Mar-2012 | Citation: | Britnell, L., Gorbachev, R.V., Jalil, R., Belle, B.D., Schedin, F., Katsnelson, M.I., Eaves, L., Morozov, S.V., Mayorov, A.S., Peres, N.M.R., Castro Neto, A.H., Leist, J., Geim, A.K., Ponomarenko, L.A., Novoselov, K.S. (2012-03-14). Electron tunneling through ultrathin boron nitride crystalline barriers. Nano Letters 12 (3) : 1707-1710. ScholarBank@NUS Repository. https://doi.org/10.1021/nl3002205 | Abstract: | We investigate the electronic properties of ultrathin hexagonal boron nitride (h-BN) crystalline layers with different conducting materials (graphite, graphene, and gold) on either side of the barrier layer. The tunnel current depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field. It offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel. © 2012 American Chemical Society. | Source Title: | Nano Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/96414 | ISSN: | 15306984 | DOI: | 10.1021/nl3002205 |
Appears in Collections: | Staff Publications |
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