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Title: Electromigration of the conducting polymer in organic semiconductor devices and its stabilization by cross-linking
Authors: Png, R.-Q. 
Chia, P.-J. 
Sivaramakrishnan, S. 
Wong, L.-Y. 
Zhou, M. 
Chua, L.-L. 
Ho, P.K.-H. 
Issue Date: 2007
Citation: Png, R.-Q., Chia, P.-J., Sivaramakrishnan, S., Wong, L.-Y., Zhou, M., Chua, L.-L., Ho, P.K.-H. (2007). Electromigration of the conducting polymer in organic semiconductor devices and its stabilization by cross-linking. Applied Physics Letters 91 (1) : -. ScholarBank@NUS Repository.
Abstract: X-ray photoelectron spectroscopy (XPS) measurement of the ratio of poly(3,4-ethylenedioxythiophene) (PEDT) to polystyrenesulfonate (PSS) reveals accumulation of PEDT+ at the interface between the PEDT:PSSH hole-injection layer and the organic semiconductor during diode operation. This ionic drift of PEDT+ occurs even at low fields of 1 V cm-1, which will have an impact on the operational stability of the characteristics of organic light-emitting diodes. XPS and Raman spectroscopy indicate that dedoping of PEDT+ does not occur significantly in hole-only devices. Cross-linking at the 1 mol % level can stabilize the conducting polymer sufficiently against electromigration. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
ISSN: 00036951
DOI: 10.1063/1.2749178
Appears in Collections:Staff Publications

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