Please use this identifier to cite or link to this item: https://doi.org/10.1364/OL.34.003142
DC FieldValue
dc.titleEffects of oxide formation around core circumference of silicon-on-oxidized-porous-silicon strip waveguides
dc.contributor.authorTeo, E.J.
dc.contributor.authorXiong, B.Q.
dc.contributor.authorOw, Y.S.
dc.contributor.authorBreese, M.B.H.
dc.contributor.authorBettiol, A.A.
dc.date.accessioned2014-10-16T09:22:40Z
dc.date.available2014-10-16T09:22:40Z
dc.date.issued2009-10-15
dc.identifier.citationTeo, E.J., Xiong, B.Q., Ow, Y.S., Breese, M.B.H., Bettiol, A.A. (2009-10-15). Effects of oxide formation around core circumference of silicon-on-oxidized-porous-silicon strip waveguides. Optics Letters 34 (20) : 3142-3144. ScholarBank@NUS Repository. https://doi.org/10.1364/OL.34.003142
dc.identifier.issn01469592
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96372
dc.description.abstractWe have studied the effect of oxidation on the propagation loss and surface roughness of silicon-on-oxidizedporous-silicon strip waveguides fabricated using proton-beam irradiation and electrochemical etching. A thin thermal oxide is formed around the core of the waveguide, enabling the symmetric reduction of core size and roughness on all sides. Significant loss reduction from about 10 dB/cm to 1 dB/cm has been obtained in TE and TM polarizations after oxidation smoothening of both the bottom and the sidewalls by 20 nm. This corresponds well with simulations using the beam-propagation method that show significant contributions from both surfaces. © 2009 Optical Society of America.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1364/OL.34.003142
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1364/OL.34.003142
dc.description.sourcetitleOptics Letters
dc.description.volume34
dc.description.issue20
dc.description.page3142-3144
dc.description.codenOPLED
dc.identifier.isiut000271374500033
Appears in Collections:Staff Publications

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