Please use this identifier to cite or link to this item: https://doi.org/10.1007/s00339-004-2964-8
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dc.titleEffects of microstructure on the properties of ferroelectric lead zirconate titanate (PZT) thin films
dc.contributor.authorGoh, W.C.
dc.contributor.authorYao, K.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-10-16T09:22:37Z
dc.date.available2014-10-16T09:22:37Z
dc.date.issued2005-10
dc.identifier.citationGoh, W.C., Yao, K., Ong, C.K. (2005-10). Effects of microstructure on the properties of ferroelectric lead zirconate titanate (PZT) thin films. Applied Physics A: Materials Science and Processing 81 (5) : 1089-1093. ScholarBank@NUS Repository. https://doi.org/10.1007/s00339-004-2964-8
dc.identifier.issn09478396
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96367
dc.description.abstractLead zirconate titanate (PZT) thin films were prepared with pulsed laser deposition and sol-gel techniques. The PZT films fabricated by these two techniques have similar randomly oriented single perovskite phases, but the film derived from the pulsed laser deposition exhibits a more compact and flat morphology. The dielectric, ferroelectric, and piezoelectric properties of the two kinds of films are comparatively characterized and discussed. It is observed that a denser microstructure would lead to a significantly higher dielectric constant and remanent polarization and a much lower coercive electric field, but only a relatively slight enhancement on the piezoelectric constant. The film with a looser microstructure could have a substantially higher piezoelectric voltage constant g33 due to the much lower dielectric constant. Our results and discussion provide a better understanding of the relationship between the microstructure and the film properties, which is essential in order to tailor the microstructure and hence determine the performance aiming at a specific application. © Springer-Verlag 2004.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/s00339-004-2964-8
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1007/s00339-004-2964-8
dc.description.sourcetitleApplied Physics A: Materials Science and Processing
dc.description.volume81
dc.description.issue5
dc.description.page1089-1093
dc.description.codenAPAMF
dc.identifier.isiut000230990200035
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