Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/96355
DC Field | Value | |
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dc.title | Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques | |
dc.contributor.author | Feng, Z.C. | |
dc.contributor.author | Ferguson, I. | |
dc.contributor.author | Stall, R.A. | |
dc.contributor.author | Li, K. | |
dc.contributor.author | Shi, Y. | |
dc.contributor.author | Singh, H. | |
dc.contributor.author | Tone, K. | |
dc.contributor.author | Zhao, J.H. | |
dc.contributor.author | Wee, A.T.S. | |
dc.contributor.author | Tan, K.L. | |
dc.contributor.author | Adar, F. | |
dc.contributor.author | Lenain, B. | |
dc.date.accessioned | 2014-10-16T09:22:28Z | |
dc.date.available | 2014-10-16T09:22:28Z | |
dc.date.issued | 1998 | |
dc.identifier.citation | Feng, Z.C.,Ferguson, I.,Stall, R.A.,Li, K.,Shi, Y.,Singh, H.,Tone, K.,Zhao, J.H.,Wee, A.T.S.,Tan, K.L.,Adar, F.,Lenain, B. (1998). Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques. Materials Science Forum 264-268 (PART 2) : 693-696. ScholarBank@NUS Repository. | |
dc.identifier.issn | 02555476 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/96355 | |
dc.description.abstract | Effects of Al+-C+ co-implantation and annealing in epitaxial n-type 6H-SiC have been studied by high resolution X-ray diffraction (HRXRD), Fourier transform infrared (FTIR) reflectance, Raman scattering (RS) and Secondary ion mass spectroscopy (SIMS). Correlations between structural/optical properties and ion implantation/annealing processes are presented. The recovery of the 6H-SiC crystallinity due to the high temperature annealing after Al+-C+ implantation has been realized and confirmed by this study. | |
dc.source | Scopus | |
dc.subject | 6H-SiC | |
dc.subject | Annealing | |
dc.subject | FTIR | |
dc.subject | Ion-Implantation | |
dc.subject | Raman Scattering | |
dc.subject | SIMS | |
dc.subject | X-Ray Diffraction | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.sourcetitle | Materials Science Forum | |
dc.description.volume | 264-268 | |
dc.description.issue | PART 2 | |
dc.description.page | 693-696 | |
dc.description.coden | MSFOE | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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