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|Title:||Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques||Authors:||Feng, Z.C.
|Issue Date:||1998||Citation:||Feng, Z.C.,Ferguson, I.,Stall, R.A.,Li, K.,Shi, Y.,Singh, H.,Tone, K.,Zhao, J.H.,Wee, A.T.S.,Tan, K.L.,Adar, F.,Lenain, B. (1998). Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques. Materials Science Forum 264-268 (PART 2) : 693-696. ScholarBank@NUS Repository.||Abstract:||Effects of Al+-C+ co-implantation and annealing in epitaxial n-type 6H-SiC have been studied by high resolution X-ray diffraction (HRXRD), Fourier transform infrared (FTIR) reflectance, Raman scattering (RS) and Secondary ion mass spectroscopy (SIMS). Correlations between structural/optical properties and ion implantation/annealing processes are presented. The recovery of the 6H-SiC crystallinity due to the high temperature annealing after Al+-C+ implantation has been realized and confirmed by this study.||Source Title:||Materials Science Forum||URI:||http://scholarbank.nus.edu.sg/handle/10635/96355||ISSN:||02555476|
|Appears in Collections:||Staff Publications|
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