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|Title:||Effect of thermal annealing on reactive radio-frequency magnetron-sputtered carbon nitride films||Authors:||Chen, G.L.
|Issue Date:||7-Feb-1999||Citation:||Chen, G.L., Li, Y., Lin, J., Huan, C.H.A., Guo, Y.P. (1999-02-07). Effect of thermal annealing on reactive radio-frequency magnetron-sputtered carbon nitride films. Journal of Physics D: Applied Physics 32 (3) : 195-199. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/32/3/003||Abstract:||Carbon nitride (CN) thin films were deposited on Si(111) subsirates by reactive radio-frequency magnetron sputtering. The effect of thermal annealing on the structural properties of the films has been studied by Fourier-transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS). Both FTIR and XPS results show that the amount of the C≡N phase decreases upon annealing and that it is eliminated by annealing at 900°C. Increasing the annealing temperature leads to the formation of a more prominent peak corresponding to the tetrahedral CN bonds in the FTIR absorption spectra. XPS N 1s peaks indicate that the third component due to the C≡N bonding state is significantly weaker than the others, relatively speaking. These results reveal that annealing causes a substantial decrease in the number of weakly bound nitrogen and carbon dangling bonds. The sp3 C-N phase is stable with respect to thermal treatment at 900°C.||Source Title:||Journal of Physics D: Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/96344||ISSN:||00223727||DOI:||10.1088/0022-3727/32/3/003|
|Appears in Collections:||Staff Publications|
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