Please use this identifier to cite or link to this item:
Title: Effect of thermal annealing on reactive radio-frequency magnetron-sputtered carbon nitride films
Authors: Chen, G.L.
Li, Y. 
Lin, J. 
Huan, C.H.A. 
Guo, Y.P. 
Issue Date: 7-Feb-1999
Citation: Chen, G.L., Li, Y., Lin, J., Huan, C.H.A., Guo, Y.P. (1999-02-07). Effect of thermal annealing on reactive radio-frequency magnetron-sputtered carbon nitride films. Journal of Physics D: Applied Physics 32 (3) : 195-199. ScholarBank@NUS Repository.
Abstract: Carbon nitride (CN) thin films were deposited on Si(111) subsirates by reactive radio-frequency magnetron sputtering. The effect of thermal annealing on the structural properties of the films has been studied by Fourier-transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS). Both FTIR and XPS results show that the amount of the C≡N phase decreases upon annealing and that it is eliminated by annealing at 900°C. Increasing the annealing temperature leads to the formation of a more prominent peak corresponding to the tetrahedral CN bonds in the FTIR absorption spectra. XPS N 1s peaks indicate that the third component due to the C≡N bonding state is significantly weaker than the others, relatively speaking. These results reveal that annealing causes a substantial decrease in the number of weakly bound nitrogen and carbon dangling bonds. The sp3 C-N phase is stable with respect to thermal treatment at 900°C.
Source Title: Journal of Physics D: Applied Physics
ISSN: 00223727
DOI: 10.1088/0022-3727/32/3/003
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.