Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0921-5107(01)00746-2
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dc.titleEffect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure
dc.contributor.authorLatt, K.M.
dc.contributor.authorPark, H.S.
dc.contributor.authorSeng, H.L.
dc.contributor.authorOsipowicz, T.
dc.contributor.authorLee, Y.K.
dc.contributor.authorLi, S.
dc.date.accessioned2014-10-16T09:22:20Z
dc.date.available2014-10-16T09:22:20Z
dc.date.issued2002-03-07
dc.identifier.citationLatt, K.M., Park, H.S., Seng, H.L., Osipowicz, T., Lee, Y.K., Li, S. (2002-03-07). Effect of the silicon nitride passivation layer on the Cu/Ta/SiO2/Si multi-layer structure. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 90 (1-2) : 25-33. ScholarBank@NUS Repository. https://doi.org/10.1016/S0921-5107(01)00746-2
dc.identifier.issn09215107
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96343
dc.description.abstractMicrostructure, composition and thermal stability of the SiNx/Cu/Ta/SiO2/Si (hereinafter 'passivated') multi-layer sample were investigated after annealing at different temperatures and compared with those of the Cu/Ta/SiO2/Si (hereinafter 'unpassivated') multi-layer sample. Observed in this study were formation of new phases, movement of element atoms across the interface, failure of a tantalum (Ta) barrier layer, agglomeration of Cu grains and change in surface morphologies of nitride and Cu layers by Rutherford backscattering spectrometry, X-ray diffraction and scanning electron microscopy. The Cu layer of the passivated sample did not show a severe agglomeration phenomenon at high annealing temperature due to protection of the Cu surface from oxygen in the annealing ambient. In addition, there were no such phases as Cu2O and Ta2O5 that were detected in the unpassivated sample. Although the thermal stability of the Ta layer was improved by addition of the passivation layer, Ta atoms diffused out to the passivation layer during annealing process at 750 °C, resulting in formation of Ta2N at the SiNx/Cu interface. © 2002 Elsevier Science B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0921-5107(01)00746-2
dc.sourceScopus
dc.subjectDiffusion barrier
dc.subjectInterfacial reaction
dc.subjectIonized metal plasma
dc.subjectMetallization
dc.subjectPhase transformation
dc.subjectTantalum
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/S0921-5107(01)00746-2
dc.description.sourcetitleMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
dc.description.volume90
dc.description.issue1-2
dc.description.page25-33
dc.description.codenMSBTE
dc.identifier.isiut000174019500006
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