Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4824834
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dc.titleEffect of oxygen stoichiometry on the insulator-metal phase transition in vanadium oxide thin films studied using optical pump-terahertz probe spectroscopy
dc.contributor.authorLiu, H.W.
dc.contributor.authorWong, L.M.
dc.contributor.authorWang, S.J.
dc.contributor.authorTang, S.H.
dc.contributor.authorZhang, X.H.
dc.date.accessioned2014-10-16T09:22:13Z
dc.date.available2014-10-16T09:22:13Z
dc.date.issued2013-10-07
dc.identifier.citationLiu, H.W., Wong, L.M., Wang, S.J., Tang, S.H., Zhang, X.H. (2013-10-07). Effect of oxygen stoichiometry on the insulator-metal phase transition in vanadium oxide thin films studied using optical pump-terahertz probe spectroscopy. Applied Physics Letters 103 (15) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4824834
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96333
dc.description.abstractUsing optical pump-terahertz probe spectroscopy, we studied the dynamic behaviors of photoinduced insulator-metal phase transition in vanadium oxide thin films with different oxygen stoichiometry. We found that the insulator-metal phase transition of vanadium dioxide is very sensitive to oxygen stoichiometry: the increased oxygen content in vanadium oxide will reduce the magnitude of phase transition and change the dynamics of the phase transition. The transient complex photoconductivity of vanadium oxide thin films is investigated and analyzed with Drude-Smith model, supplying insight of the dynamic process of phase transition in vanadium oxide thin films. © 2013 AIP Publishing LLC.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4824834
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.4824834
dc.description.sourcetitleApplied Physics Letters
dc.description.volume103
dc.description.issue15
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000325779700033
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