Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2202752
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dc.titleEffect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric
dc.contributor.authorWang, S.J.
dc.contributor.authorChai, J.W.
dc.contributor.authorDong, Y.F.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorSutanto, N.
dc.contributor.authorPan, J.S.
dc.contributor.authorHuan, A.C.H.
dc.date.accessioned2014-10-16T09:22:09Z
dc.date.available2014-10-16T09:22:09Z
dc.date.issued2006
dc.identifier.citationWang, S.J., Chai, J.W., Dong, Y.F., Feng, Y.P., Sutanto, N., Pan, J.S., Huan, A.C.H. (2006). Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric. Applied Physics Letters 88 (19) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2202752
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96329
dc.description.abstractThe effect of nitrogen incorporation on the electronic structure and thermal stability of Hf O2 gate dielectric was investigated by using photoemission study and first-principles calculation. Hafnium oxynitride (HfON) dielectric shows higher thermal stability in comparison to pure Hf O2 on Si. Atomic N can passivate O vacancies in the dielectrics during nitridation process, but the N atoms incorporated into interstitial sites cause band gap reduction. Postnitridation annealing is required to activate interstitial N atoms to form stable N-Hf bonds, which will increase the band gap and band offset of as-nitrided dielectric film. © 2006 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2202752
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.2202752
dc.description.sourcetitleApplied Physics Letters
dc.description.volume88
dc.description.issue19
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000237477400041
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