Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2202752
Title: Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric
Authors: Wang, S.J.
Chai, J.W.
Dong, Y.F.
Feng, Y.P. 
Sutanto, N.
Pan, J.S.
Huan, A.C.H.
Issue Date: 2006
Citation: Wang, S.J., Chai, J.W., Dong, Y.F., Feng, Y.P., Sutanto, N., Pan, J.S., Huan, A.C.H. (2006). Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric. Applied Physics Letters 88 (19) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2202752
Abstract: The effect of nitrogen incorporation on the electronic structure and thermal stability of Hf O2 gate dielectric was investigated by using photoemission study and first-principles calculation. Hafnium oxynitride (HfON) dielectric shows higher thermal stability in comparison to pure Hf O2 on Si. Atomic N can passivate O vacancies in the dielectrics during nitridation process, but the N atoms incorporated into interstitial sites cause band gap reduction. Postnitridation annealing is required to activate interstitial N atoms to form stable N-Hf bonds, which will increase the band gap and band offset of as-nitrided dielectric film. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96329
ISSN: 00036951
DOI: 10.1063/1.2202752
Appears in Collections:Staff Publications

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