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Title: Effect of low fluence laser annealing on ultrathin Lu2 O3 high- k dielectric
Authors: Darmawan, P.
Lee, P.S.
Setiawan, Y.
Ma, J.
Osipowicz, T. 
Issue Date: 2007
Citation: Darmawan, P., Lee, P.S., Setiawan, Y., Ma, J., Osipowicz, T. (2007). Effect of low fluence laser annealing on ultrathin Lu2 O3 high- k dielectric. Applied Physics Letters 91 (9) : -. ScholarBank@NUS Repository.
Abstract: The effect of low fluence single pulse laser annealing on a pulsed laser deposited high- k dielectric, Lu2 O3 is reported. With low fluence laser irradiation, high " k " of 45 is achieved with an equivalent oxide thickness of 0.39 nm, without taking into account the quantum mechanical tunneling effect. High-resolution transmission electron microscopy micrograph revealed well-ordered epitaxial-like interfacial layer. High-resolution Rutherford backscattering confirmed the presence of Lu-based silicate layer at the interface. It was proposed that the high dielectric constant was caused by the increased ionic polarizability in the film, thereby increasing the ionic contribution of the dielectric constant. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
ISSN: 00036951
DOI: 10.1063/1.2771065
Appears in Collections:Staff Publications

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