Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2771065
DC FieldValue
dc.titleEffect of low fluence laser annealing on ultrathin Lu2 O3 high- k dielectric
dc.contributor.authorDarmawan, P.
dc.contributor.authorLee, P.S.
dc.contributor.authorSetiawan, Y.
dc.contributor.authorMa, J.
dc.contributor.authorOsipowicz, T.
dc.date.accessioned2014-10-16T09:22:02Z
dc.date.available2014-10-16T09:22:02Z
dc.date.issued2007
dc.identifier.citationDarmawan, P., Lee, P.S., Setiawan, Y., Ma, J., Osipowicz, T. (2007). Effect of low fluence laser annealing on ultrathin Lu2 O3 high- k dielectric. Applied Physics Letters 91 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2771065
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96319
dc.description.abstractThe effect of low fluence single pulse laser annealing on a pulsed laser deposited high- k dielectric, Lu2 O3 is reported. With low fluence laser irradiation, high " k " of 45 is achieved with an equivalent oxide thickness of 0.39 nm, without taking into account the quantum mechanical tunneling effect. High-resolution transmission electron microscopy micrograph revealed well-ordered epitaxial-like interfacial layer. High-resolution Rutherford backscattering confirmed the presence of Lu-based silicate layer at the interface. It was proposed that the high dielectric constant was caused by the increased ionic polarizability in the film, thereby increasing the ionic contribution of the dielectric constant. © 2007 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2771065
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.2771065
dc.description.sourcetitleApplied Physics Letters
dc.description.volume91
dc.description.issue9
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000249156100083
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