Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2762277
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dc.titleEffect of interfacial oxynitride layer on the band alignment and thermal stability of LaAlO3 films on SiGe
dc.contributor.authorMi, Y.Y.
dc.contributor.authorWang, S.J.
dc.contributor.authorChai, J.W.
dc.contributor.authorSeng, H.L.
dc.contributor.authorPan, J.S.
dc.contributor.authorFoo, Y.L.
dc.contributor.authorHuan, C.H.A.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-10-16T09:21:58Z
dc.date.available2014-10-16T09:21:58Z
dc.date.issued2007
dc.identifier.citationMi, Y.Y., Wang, S.J., Chai, J.W., Seng, H.L., Pan, J.S., Foo, Y.L., Huan, C.H.A., Ong, C.K. (2007). Effect of interfacial oxynitride layer on the band alignment and thermal stability of LaAlO3 films on SiGe. Applied Physics Letters 91 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2762277
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96313
dc.description.abstractThe effect of interfacial oxynitride layer on the band alignment and thermal stability of amorphous LaAl O3 Si0.75 Ge0.25 heterojunction has been investigated. The presence of interfacial oxynitride layer shifts the band alignment due to the modification of interfacial dipole. During the thermal annealing, it was found that the interfacial electronic structures were altered, and the valence-band maximum of LaAl O3 films shifted to the lower energy due to the diffusion of nitrogen species from the interfaces into LaAl O3 films at high annealing temperature. © 2007 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2762277
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.2762277
dc.description.sourcetitleApplied Physics Letters
dc.description.volume91
dc.description.issue4
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000248345500042
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