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|Title:||Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method||Authors:||Zhang, K.
|Issue Date:||1999||Citation:||Zhang, K.,Zhu, F.,Huan, C.H.A.,Wee, A.T.S. (1999). Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method. Journal of Applied Physics 86 (2) : 974-980. ScholarBank@NUS Repository.||Abstract:||Indium tin oxide (ITO) films were fabricated on glass substrates by the rf magnetron sputtering method using hydrogen-argon mixture. The experimental results show that the primary effect of introducing hydrogen during the film preparation is to increase the number of oxygen vacancies and hence the charge carrier concentration. Hall effect measurements showed that the carrier mobility did not increase considerably. The improvement of the optical and electrical properties in ITO films is attributed to the increased carrier concentration. Uniform ITO films with resistivities of 2.7×10-4 cm and transparency of 89% over the visible wavelength region were achieved.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/96310||ISSN:||00218979|
|Appears in Collections:||Staff Publications|
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