Please use this identifier to cite or link to this item:
Title: Dynamics of optical nonlinearity of Ge nanocrystals in a silica matrix
Authors: Jie, Y.X. 
Xiong, Y.N.
Wee, A.T.S. 
Huan, C.H.A. 
Ji, W. 
Issue Date: 11-Dec-2000
Citation: Jie, Y.X.,Xiong, Y.N.,Wee, A.T.S.,Huan, C.H.A.,Ji, W. (2000-12-11). Dynamics of optical nonlinearity of Ge nanocrystals in a silica matrix. Applied Physics Letters 77 (24) : 3926-3928. ScholarBank@NUS Repository.
Abstract: The optical nonlinearity and excited carrier lifetime in Ge nanocrystals (nc-Ge) embedded in a silica matrix have been investigated by means of single beam z scan and pump-probe techniques with laser pulse duration of 35 ps and 532 nm wavelength. The nc-Ge samples were prepared using magnetron cosputtering and postgrowth annealing at 800 °C. The nonlinear absorption coefficient α2 and refractive index n2 were found to range between 190 and 760 cm/GW, and 0.0026 and 0.0082 cm2/GW, respectively, and be proportional to the Ge concentration in the film. The confined excited carriers were found to depopulate with a lifetime of ∼70 ps. The nonlinearity in Ge nanocrystals is deduced to originate mainly from excited carrier absorption, with two-photon absorption providing a small contribution. © 2000 American Institute of Physics.
Source Title: Applied Physics Letters
ISSN: 00036951
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Jul 20, 2019

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.