Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn2008832
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dc.titleDynamics of bound exciton complexes in CdS nanobelts
dc.contributor.authorXu, X.
dc.contributor.authorZhao, Y.
dc.contributor.authorSie, E.J.
dc.contributor.authorLu, Y.
dc.contributor.authorLiu, B.
dc.contributor.authorEkahana, S.A.
dc.contributor.authorJu, X.
dc.contributor.authorJiang, Q.
dc.contributor.authorWang, J.
dc.contributor.authorSun, H.
dc.contributor.authorSum, T.C.
dc.contributor.authorHuan, C.H.A.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorXiong, Q.
dc.date.accessioned2014-10-16T09:21:34Z
dc.date.available2014-10-16T09:21:34Z
dc.date.issued2011-05-24
dc.identifier.citationXu, X., Zhao, Y., Sie, E.J., Lu, Y., Liu, B., Ekahana, S.A., Ju, X., Jiang, Q., Wang, J., Sun, H., Sum, T.C., Huan, C.H.A., Feng, Y.P., Xiong, Q. (2011-05-24). Dynamics of bound exciton complexes in CdS nanobelts. ACS Nano 5 (5) : 3660-3669. ScholarBank@NUS Repository. https://doi.org/10.1021/nn2008832
dc.identifier.issn19360851
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96277
dc.description.abstractIntrinsic defects such as vacancies, interstitials, and anti-sites often introduce rich luminescent properties in II-VI semiconductor nanomaterials. A clear understanding of the dynamics of the defect-related excitons is particularly important for the design and optimization of nanoscale optoelectronic devices. In this paper, low-temperature steady-state and time-resolved photoluminescence (PL) spectroscopies have been carried out to investigate the emission of cadmium sulfide (CdS) nanobelts that originates from the radiative recombination of excitons bound to neutral donors (I2) and the spatially localized donor-acceptor pairs (DAP), in which the assignment is supported by first principle calculations. Our results verify that the shallow donors in CdS are contributed by sulfur vacancies while the acceptors are contributed by cadmium vacancies. At high excitation intensities, the DAP emission saturates and the PL is dominated by I2 emission. Beyond a threshold power of approximately 5 μW, amplified spontaneous emission (ASE) of I2 occurs. Further analysis shows that these intrinsic defects created long-lived (spin triplet) DAP trap states due to spin-polarized Cd vacancies which become saturated at intense carrier excitations. © 2011 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/nn2008832
dc.sourceScopus
dc.subjectBound exciton complex
dc.subjectCdS nanobelt
dc.subjectDynamics defect level
dc.subjectExciton interaction
dc.subjectUltrafast
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1021/nn2008832
dc.description.sourcetitleACS Nano
dc.description.volume5
dc.description.issue5
dc.description.page3660-3669
dc.identifier.isiut000290826800031
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