Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2364834
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dc.titleDopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing
dc.contributor.authorOng, K.K.
dc.contributor.authorPey, K.L.
dc.contributor.authorLee, P.S.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorWang, X.C.
dc.contributor.authorChong, Y.F.
dc.date.accessioned2014-10-16T09:21:25Z
dc.date.available2014-10-16T09:21:25Z
dc.date.issued2006
dc.identifier.citationOng, K.K., Pey, K.L., Lee, P.S., Wee, A.T.S., Wang, X.C., Chong, Y.F. (2006). Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing. Applied Physics Letters 89 (17) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2364834
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96264
dc.description.abstractPileup of boron atoms near the maximum melt depth in bulk silicon and silicon-on-insulator (SOI) substrates upon laser annealing (LA) was studied. The results show that boron atoms accumulate near the maximum melt depth in shallow melting and increases with increasing laser pulses. The pileup is found to be related to the recrystallization behavior of the melted silicon during LA and occurs at a recrystallization transient, RT0, of about 10 nm from the maximum melt depth in both SOI and bulk silicon substrates. An abrupt recrystallization process in preamorphized silicon, on the other hand, suppresses the formation of the boron pileup during LA. © 2006 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2364834
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.2364834
dc.description.sourcetitleApplied Physics Letters
dc.description.volume89
dc.description.issue17
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000241585800059
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