Please use this identifier to cite or link to this item:
https://doi.org/10.1103/PhysRevB.48.1595
DC Field | Value | |
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dc.title | Dimers and divacancy effects on a reconstructed Si(001) surface | |
dc.contributor.author | Lim, H.S. | |
dc.contributor.author | Low, K.C. | |
dc.contributor.author | Ong, C.K. | |
dc.date.accessioned | 2014-10-16T09:21:03Z | |
dc.date.available | 2014-10-16T09:21:03Z | |
dc.date.issued | 1993 | |
dc.identifier.citation | Lim, H.S., Low, K.C., Ong, C.K. (1993). Dimers and divacancy effects on a reconstructed Si(001) surface. Physical Review B 48 (3) : 1595-1600. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.48.1595 | |
dc.identifier.issn | 01631829 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/96232 | |
dc.description.abstract | We have employed a tight-binding molecular-dynamics scheme to study the structural and dynamical behavior of dimers and the divacancy on a Si(001) surface at room temperature. At T=0 K, we conclude that dimers are intrinsically asymmetric but they fluctuate to give on a time average a symmetric appearance at room temperature. However, the presence of a divacancy defect is found to induce and stabilize the formation of buckled dimers in its vicinity. These dimers, in addition, are found to be twisted although, in the defect-free surface, none appears so. A detailed analysis of the structural and dynamical properties of the defect and its influence on the behavior of neighboring dimers is presented and discussed. © 1993 The American Physical Society. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1103/PhysRevB.48.1595 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1103/PhysRevB.48.1595 | |
dc.description.sourcetitle | Physical Review B | |
dc.description.volume | 48 | |
dc.description.issue | 3 | |
dc.description.page | 1595-1600 | |
dc.identifier.isiut | A1993LP05000027 | |
Appears in Collections: | Staff Publications |
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