Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.48.1595
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dc.titleDimers and divacancy effects on a reconstructed Si(001) surface
dc.contributor.authorLim, H.S.
dc.contributor.authorLow, K.C.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-10-16T09:21:03Z
dc.date.available2014-10-16T09:21:03Z
dc.date.issued1993
dc.identifier.citationLim, H.S., Low, K.C., Ong, C.K. (1993). Dimers and divacancy effects on a reconstructed Si(001) surface. Physical Review B 48 (3) : 1595-1600. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.48.1595
dc.identifier.issn01631829
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96232
dc.description.abstractWe have employed a tight-binding molecular-dynamics scheme to study the structural and dynamical behavior of dimers and the divacancy on a Si(001) surface at room temperature. At T=0 K, we conclude that dimers are intrinsically asymmetric but they fluctuate to give on a time average a symmetric appearance at room temperature. However, the presence of a divacancy defect is found to induce and stabilize the formation of buckled dimers in its vicinity. These dimers, in addition, are found to be twisted although, in the defect-free surface, none appears so. A detailed analysis of the structural and dynamical properties of the defect and its influence on the behavior of neighboring dimers is presented and discussed. © 1993 The American Physical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1103/PhysRevB.48.1595
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1103/PhysRevB.48.1595
dc.description.sourcetitlePhysical Review B
dc.description.volume48
dc.description.issue3
dc.description.page1595-1600
dc.identifier.isiutA1993LP05000027
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