Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.45.11120
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dc.titleDiffusion of a Si atom on the Si(001)-2×1 surface: A Monte Carlo study
dc.contributor.authorToh, C.P.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-10-16T09:20:59Z
dc.date.available2014-10-16T09:20:59Z
dc.date.issued1992
dc.identifier.citationToh, C.P., Ong, C.K. (1992). Diffusion of a Si atom on the Si(001)-2×1 surface: A Monte Carlo study. Physical Review B 45 (19) : 11120-11125. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.45.11120
dc.identifier.issn01631829
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96225
dc.description.abstractWe use a modified form of the Stillinger-Weber potential to obtain the adsorption sites of a silicon atom on the fully relaxed Si(001)-2×1 surface. The barriers between sites are also found and these are used to estimate the rates of hopping from site to site. We conclude that the direction of easy diffusion is parallel and to the side of the dimer rows. The effective activation energy for the resultant quasi-one-dimensional motion (0.33 eV) is compared with recent experimental estimates. Our results also explain the appearance of regular island growth at high temperature as well as low-temperature diluted-dimer growth. © 1992 The American Physical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1103/PhysRevB.45.11120
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1103/PhysRevB.45.11120
dc.description.sourcetitlePhysical Review B
dc.description.volume45
dc.description.issue19
dc.description.page11120-11125
dc.identifier.isiutA1992HU79900029
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