Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/5/5/006
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dc.titleDiffusion and interconversion of 'defect' ad-dimers on the Si(001) 2*1 surface: A molecular statics study
dc.contributor.authorToh, C.P.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-10-16T09:20:57Z
dc.date.available2014-10-16T09:20:57Z
dc.date.issued1993
dc.identifier.citationToh, C.P., Ong, C.K. (1993). Diffusion and interconversion of 'defect' ad-dimers on the Si(001) 2*1 surface: A molecular statics study. Journal of Physics: Condensed Matter 5 (5) : 551-558. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/5/5/006
dc.identifier.issn09538984
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96222
dc.description.abstractThe authors use a modified form of the Stillinger-Weber potential to obtain the binding energy and geometry of a number of Si ad-dimer structures on the fully relaxed Si(001) 2*1 surface by canonical Monte Carlo simulation. At low temperatures they show the possible existence of two kinds of 'defect' ad-dimers which may hinder normal 1*2 growth. The mechanisms for both diffusion and interconversion of such dimers are then elucidated by examining their associated minimum-energy paths.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1088/0953-8984/5/5/006
dc.description.sourcetitleJournal of Physics: Condensed Matter
dc.description.volume5
dc.description.issue5
dc.description.page551-558
dc.identifier.isiutA1993KL07000006
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