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dc.titleDevelopment of chemical beam epitaxy for the deposition of gallium nitride
dc.contributor.authorKingsley, C.R.
dc.contributor.authorWhitaker, T.J.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorJackman, R.B.
dc.contributor.authorFoord, J.S.
dc.identifier.citationKingsley, C.R.,Whitaker, T.J.,Wee, A.T.S.,Jackman, R.B.,Foord, J.S. (1995-01). Development of chemical beam epitaxy for the deposition of gallium nitride. Materials Science and Engineering B 29 (1-3) : 78-82. ScholarBank@NUS Repository.
dc.description.abstractModern approaches to the growth of high quality gallium nitride thin films have focused on the use of metal-organic vapour phase epitaxy or plasma-assisted gas source molecular beam epitaxy. However, both of these techniques possess limitations. The present study therefore examined a new approach to GaN deposition using chemical beam epitaxy and the new nitrogen precursor, hydrogen azide. Thin films of gallium nitride (GaN) were successfully prepared. X-ray photoelectron spectroscopy reveals that stoichiometric materials is formed with little or no contamination when HN3 and a range of Ga precursors react on the substrate at temperatures down to 450°C. The results indicate that the incorporation efficiency of N in the GaN film from HN3 is high, suggesting the precursor may provide a more attractive route to the deposition of GaN films under low pressure molecular beam conditions than is currently offered using ammonia or plasma-excited nitrogen beam sources. Electrical measurements on the grown films are also reported. © 1995.
dc.subjectGallium nitride
dc.subjectSchottky barrier
dc.subjectThin films
dc.description.sourcetitleMaterials Science and Engineering B
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