Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/96204
DC FieldValue
dc.titleDetermination of two-photon-generated free-carrier lifetime in semiconductors by a single-beam Z-scan technique
dc.contributor.authorZhang, X.
dc.contributor.authorFang, H.
dc.contributor.authorTang, S.
dc.contributor.authorJi, W.
dc.date.accessioned2014-10-16T09:20:45Z
dc.date.available2014-10-16T09:20:45Z
dc.date.issued1997
dc.identifier.citationZhang, X.,Fang, H.,Tang, S.,Ji, W. (1997). Determination of two-photon-generated free-carrier lifetime in semiconductors by a single-beam Z-scan technique. Applied Physics B: Lasers and Optics 65 (4-5) : 549-554. ScholarBank@NUS Repository.
dc.identifier.issn09462171
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96204
dc.description.abstractWe report a method for determining photo-excited free-carrier recombination time in semiconductors. This method is based on the simulation of single-beam Z scans with laser pulses of two different widths: 25 ps and 7 ns (FWHM). By conducting Z scans with laser pulses of 25-ps duration, the two-photon absorption coefficient, the nonlinear refractive index, and the refractive index change induced by an electron-hole pair excited by two-photon absorption are first determined unambiguously. While using these nonlinear parameters in Z scans obtained with 7-ns laser pulses, the lifetimes of two-photon-excited free carriers are accurately extracted to be 7.0±1.0, 2.8±0.3, and 18±4 ns in semiconductors ZnSe, ZnO, and ZnS, respectively. © Springer-Verlag 1997.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.sourcetitleApplied Physics B: Lasers and Optics
dc.description.volume65
dc.description.issue4-5
dc.description.page549-554
dc.description.codenAPBOE
dc.identifier.isiutNOT_IN_WOS
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