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|Title:||Determination of two-photon-generated free-carrier lifetime in semiconductors by a single-beam Z-scan technique||Authors:||Zhang, X.
|Issue Date:||1997||Citation:||Zhang, X.,Fang, H.,Tang, S.,Ji, W. (1997). Determination of two-photon-generated free-carrier lifetime in semiconductors by a single-beam Z-scan technique. Applied Physics B: Lasers and Optics 65 (4-5) : 549-554. ScholarBank@NUS Repository.||Abstract:||We report a method for determining photo-excited free-carrier recombination time in semiconductors. This method is based on the simulation of single-beam Z scans with laser pulses of two different widths: 25 ps and 7 ns (FWHM). By conducting Z scans with laser pulses of 25-ps duration, the two-photon absorption coefficient, the nonlinear refractive index, and the refractive index change induced by an electron-hole pair excited by two-photon absorption are first determined unambiguously. While using these nonlinear parameters in Z scans obtained with 7-ns laser pulses, the lifetimes of two-photon-excited free carriers are accurately extracted to be 7.0±1.0, 2.8±0.3, and 18±4 ns in semiconductors ZnSe, ZnO, and ZnS, respectively. © Springer-Verlag 1997.||Source Title:||Applied Physics B: Lasers and Optics||URI:||http://scholarbank.nus.edu.sg/handle/10635/96204||ISSN:||09462171|
|Appears in Collections:||Staff Publications|
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