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|Title:||Determination of some physical parameters from infrared reflectance spectra||Authors:||Kok, W.C.||Issue Date:||1992||Citation:||Kok, W.C. (1992). Determination of some physical parameters from infrared reflectance spectra. Applied Surface Science 60-61 (C) : 559-564. ScholarBank@NUS Repository.||Abstract:||An expression is derived for the spectral variation of the normal-incidence reflectance of a diffused semiconductor wafer. Based on this approximate analytical form, a method is proposed for the determination of some physical parameters of doped semiconductors. For illustrative purposes, the method is applied to a phosphorus-diffused silicon sample where the IR reflectance data and diffusion profile are both available. © 1992.||Source Title:||Applied Surface Science||URI:||http://scholarbank.nus.edu.sg/handle/10635/96199||ISSN:||01694332|
|Appears in Collections:||Staff Publications|
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