Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.81.033301
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dc.titleDependence of quantum-Hall conductance on the edge-state equilibration position in a bipolar graphene sheet
dc.contributor.authorKi, D.-K.
dc.contributor.authorNam, S.-G.
dc.contributor.authorLee, H.-J.
dc.contributor.authorÖzyilmaz, B.
dc.date.accessioned2014-10-16T09:20:21Z
dc.date.available2014-10-16T09:20:21Z
dc.date.issued2010-01-06
dc.identifier.citationKi, D.-K., Nam, S.-G., Lee, H.-J., Özyilmaz, B. (2010-01-06). Dependence of quantum-Hall conductance on the edge-state equilibration position in a bipolar graphene sheet. Physical Review B - Condensed Matter and Materials Physics 81 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.81.033301
dc.identifier.issn10980121
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96169
dc.description.abstractBy using four-terminal configurations, we investigated the dependence of longitudinal and diagonal resistances of a graphene p-n interface on the quantum-Hall edge-state equilibration position. The resistance of a p-n device in our four-terminal scheme is asymmetric with respect to the zero point where the filling factor (ν) of the entire graphene vanishes. This resistance asymmetry is caused by the chiral direction dependent change in the equilibration position and leads to a deeper insight into the equilibration process of the quantum-Hall edge-states in a bipolar graphene system. © 2010 The American Physical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1103/PhysRevB.81.033301
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1103/PhysRevB.81.033301
dc.description.sourcetitlePhysical Review B - Condensed Matter and Materials Physics
dc.description.volume81
dc.description.issue3
dc.description.page-
dc.description.codenPRBMD
dc.identifier.isiut000274002300009
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