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|Title:||Defect processes in GaP: Implications for the behavior of excited surface defects||Authors:||Khoo, G.S.
|Issue Date:||1993||Citation:||Khoo, G.S., Ong, C.K. (1993). Defect processes in GaP: Implications for the behavior of excited surface defects. Physical Review B 47 (15) : 9346-9349. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.47.9346||Abstract:||We have investigated the different charge states and geometries of the P vacancy and Ga antisite defects in bulk GaP as well as on the GaP(110) surface. Similar behavior is observed for both the bulk and surface. The charged P vacancy VP+ exhibits symmetric outward relaxations from the vacancy site while VP0 and VP- display distortions that lower the symmetry. For the Ga antisite defect (GaP), the neutral GaP0 has a broken-bond configuration with one of its Ga nearest neighbors, while GaP- and GaP2- both have the centered configuration. However, due to their lack of symmetry, the atoms at the surface display a larger distortion. The effects of excitations initially lead to a more positive charge state of the surface defects and subsequently to bond weakening. © 1993 The American Physical Society.||Source Title:||Physical Review B||URI:||http://scholarbank.nus.edu.sg/handle/10635/96157||ISSN:||01631829||DOI:||10.1103/PhysRevB.47.9346|
|Appears in Collections:||Staff Publications|
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