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|Title:||Defect engineering in CdSxSe1-x nanobelts: An insight into carrier relaxation dynamics via optical pump-terahertz probe spectroscopy||Authors:||Liu, H.
|Issue Date:||13-Dec-2012||Citation:||Liu, H., Lu, J., Teoh, H.F., Li, D., Feng, Y.P., Tang, S.H., Sow, C.H., Zhang, X. (2012-12-13). Defect engineering in CdSxSe1-x nanobelts: An insight into carrier relaxation dynamics via optical pump-terahertz probe spectroscopy. Journal of Physical Chemistry C 116 (49) : 26036-26042. ScholarBank@NUS Repository. https://doi.org/10.1021/jp307864d||Abstract:||Defects in nanomaterials often induce dramatic changes in the photoelectrical properties of semiconducting II-VI compound nanomaterials. The relationship between defects and carrier dynamics is pivotal in material engineering for potential applications. A thorough understanding of the dynamics of defect-related free carrier depletion is particularly important for the fabrication and optimization of nano-optoelectronic devices. In this work, optical pump-terahertz probe spectroscopy was employed to investigate the carrier dynamics in CdS and Se-alloyed CdS nanobelts. The dynamics are dominated by the surface defect trapping in the case of CdS and structural-defect-related recombination for the Se-alloyed CdS. The conclusion is also supported by temperature-dependent photoluminescence spectroscopic studies. Our results indicate that congeneric element replacement is an effective approach for defect-distribution restructuring, which modifies the physical properties of nanomaterials through defect engineering. © 2012 American Chemical Society.||Source Title:||Journal of Physical Chemistry C||URI:||http://scholarbank.nus.edu.sg/handle/10635/96154||ISSN:||19327447||DOI:||10.1021/jp307864d|
|Appears in Collections:||Staff Publications|
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