Please use this identifier to cite or link to this item: https://doi.org/10.1209/0295-5075/95/18001
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dc.titleCoulomb drag and high-resistivity behavior in double-layer graphene
dc.contributor.authorPeres, N.M.R.
dc.contributor.authorLopes Dos Santos, J.M.B.
dc.contributor.authorCastro Neto, A.H.
dc.date.accessioned2014-10-16T09:19:41Z
dc.date.available2014-10-16T09:19:41Z
dc.date.issued2011-07
dc.identifier.citationPeres, N.M.R., Lopes Dos Santos, J.M.B., Castro Neto, A.H. (2011-07). Coulomb drag and high-resistivity behavior in double-layer graphene. EPL 95 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1209/0295-5075/95/18001
dc.identifier.issn02955075
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96119
dc.description.abstractWe show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on-and-off ratio for current flow by tuning the external gate voltage. Hence, although graphene remains semi-metallic, the double-layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double-layer graphene samples in disordered SiO2 substrates. Copyright © 2011 EPLA.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1209/0295-5075/95/18001
dc.description.sourcetitleEPL
dc.description.volume95
dc.description.issue1
dc.description.page-
dc.identifier.isiut000291990600030
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