Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2219989
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dc.titleControlled blueshift of the resonant wavelength in porous silicon microcavities using ion irradiation
dc.contributor.authorMangaiyarkarasi, D.
dc.contributor.authorBreese, M.B.H.
dc.contributor.authorOw, Y.S.
dc.contributor.authorVijila, C.
dc.date.accessioned2014-10-16T09:19:17Z
dc.date.available2014-10-16T09:19:17Z
dc.date.issued2006
dc.identifier.citationMangaiyarkarasi, D., Breese, M.B.H., Ow, Y.S., Vijila, C. (2006). Controlled blueshift of the resonant wavelength in porous silicon microcavities using ion irradiation. Applied Physics Letters 89 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2219989
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96084
dc.description.abstractHigh-energy focused proton beam irradiation has been used to controllably blueshift the resonant wavelength of porous silicon microcavities in heavily doped p-type wafers. Irradiation results in an increased resistivity, hence a locally reduced rate of anodization. Irradiated regions are consequently thinner and of a higher refractive index than unirradiated regions, and the microcavity blueshift arises from a net reduction in the optical thickness of each porous layer. Using this process wafers are patterned on a micrometer lateral scale with microcavities tuned to different resonant wavelengths, giving rise to high-resolution full-color reflection images over the full visible spectrum. © 2006 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2219989
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.2219989
dc.description.sourcetitleApplied Physics Letters
dc.description.volume89
dc.description.issue2
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000239793100028
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