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|Title:||Combined optical, surface and nuclear microscopic assessment of porous silicon formed in HF-acetonitrile||Authors:||Feng, Z.C.
|Issue Date:||24-Feb-2006||Citation:||Feng, Z.C., Yu, J.W., Li, K., Feng, Y.P., Padmanabhan, K.R., Yang, T.R. (2006-02-24). Combined optical, surface and nuclear microscopic assessment of porous silicon formed in HF-acetonitrile. Surface and Coatings Technology 200 (10 SPEC. ISS.) : 3254-3260. ScholarBank@NUS Repository. https://doi.org/10.1016/j.surfcoat.2005.07.025||Abstract:||A new type of HF solution, HF-acetonitrile (MeCN), has been employed to produce 10-30 μm thick porous silicon (P-Si) layers by photoelectrochemical etching of different types of Si wafers, Si(100), Si(111) and polycrystalline Si, with different resistivities. A combined optical, surface and nuclear microscopic assessment of these P-Si layers was performed using photoluminescence (PL), Raman scattering, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. With increasing resistivity of the Si(100) wafers, the P-Si layers show a slight blue shift of their visible light emission peak energy, an up shift of the peak position and a narrowing of the band width of the dominant Raman band, and a decrease in the amount of residual elemental Si on the surface. Those Si(111) wafers, etched in HF-MeCN, showed no porous structures and no visible light emission. © 2005 Elsevier B.V. All rights reserved.||Source Title:||Surface and Coatings Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/96021||ISSN:||02578972||DOI:||10.1016/j.surfcoat.2005.07.025|
|Appears in Collections:||Staff Publications|
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