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https://scholarbank.nus.edu.sg/handle/10635/96000
DC Field | Value | |
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dc.title | CNDO calculation of energies of Ga atom ejection from defect sites on the GaP(110) surface | |
dc.contributor.author | Ong, C.K. | |
dc.contributor.author | Khoo, G.S. | |
dc.contributor.author | Hattori, K. | |
dc.contributor.author | Nakai, Y. | |
dc.contributor.author | Itoh, N. | |
dc.date.accessioned | 2014-10-16T09:18:20Z | |
dc.date.available | 2014-10-16T09:18:20Z | |
dc.date.issued | 1991-12-02 | |
dc.identifier.citation | Ong, C.K.,Khoo, G.S.,Hattori, K.,Nakai, Y.,Itoh, N. (1991-12-02). CNDO calculation of energies of Ga atom ejection from defect sites on the GaP(110) surface. Surface Science 259 (3) : L787-L790. ScholarBank@NUS Repository. | |
dc.identifier.issn | 00396028 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/96000 | |
dc.description.abstract | We have carried out a semi-empirical quantum mechanical calculation of the energy needed to eject a Ga atom from several types of defect sites on the GaP(110) surface. It is shown that the energy needed to remove a Ga atom from defect sites increases according to the sequence: a P(Ga) antisite, a GaP divacancy, a P vacancy, an adatom, a kink site on the surface and a Ga vacancy. All of which the energy lies in the region below 3 eV, and hence ejection of a Ga atom from each of these defects can be induced at least energetically by localization of two electron-hole pairs on a defect site. © 1991. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.description.sourcetitle | Surface Science | |
dc.description.volume | 259 | |
dc.description.issue | 3 | |
dc.description.page | L787-L790 | |
dc.description.coden | SUSCA | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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