Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/1/6/005
DC FieldValue
dc.titleChemisorption of fluorine and chlorine on a Si(111) surface
dc.contributor.authorOng, C.K.
dc.contributor.authorTay, L.P.
dc.date.accessioned2014-10-16T09:18:08Z
dc.date.available2014-10-16T09:18:08Z
dc.date.issued1989
dc.identifier.citationOng, C.K., Tay, L.P. (1989). Chemisorption of fluorine and chlorine on a Si(111) surface. Journal of Physics: Condensed Matter 1 (6) : 1071-1076. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/1/6/005
dc.identifier.issn09538984
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/95986
dc.description.abstractThe total energy profiles along the onefold on-top site axis and the threefold hollow site axis of chemisorption of fluorine and chlorine on a Si(111) surface have been determined by using the CNDO method. Clusters of 19 and 23 silicon atoms, respectively, are used to simulate onefold-site and threefold-site chemisorbed systems. The distance between the on-top site and the nearest silicon atoms is found to be 2.18 AA, which compares favourably with the experimental value of 2.03 AA. The authors also find that the fluorine atom can penetrate into the silicon substrate while the chlorine atom cannot. The on-top site is the most stable site for both chemisorbed systems.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1088/0953-8984/1/6/005
dc.description.sourcetitleJournal of Physics: Condensed Matter
dc.description.volume1
dc.description.issue6
dc.description.page1071-1076
dc.identifier.isiutA1989T331800005
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