Please use this identifier to cite or link to this item: https://doi.org/10.1007/s00340-005-2079-8
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dc.titleCarrier concentration dependence of optical Kerr nonlinearity in indium tin oxide films
dc.contributor.authorElim, H.I.
dc.contributor.authorJi, W.
dc.contributor.authorZhu, F.
dc.date.accessioned2014-10-16T09:17:29Z
dc.date.available2014-10-16T09:17:29Z
dc.date.issued2006-03
dc.identifier.citationElim, H.I., Ji, W., Zhu, F. (2006-03). Carrier concentration dependence of optical Kerr nonlinearity in indium tin oxide films. Applied Physics B: Lasers and Optics 82 (3) : 439-442. ScholarBank@NUS Repository. https://doi.org/10.1007/s00340-005-2079-8
dc.identifier.issn09462171
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/95928
dc.description.abstractOptical Kerr nonlinearity (n2) in n-type indium tin oxide (ITO) films coated on glass substrates has been measured using Z-scans with 200-fs laser pulses at wavelengths ranging from 720 to 780 nm. The magnitudes of the measured nonlinearity in the ITO films were found to be dependent on the carrier concentration with a maximum n2-value of 4.1×10-5 cm2/GW at 720-nm wavelength and an electron density of N d=5.8×1020 cm-3. The Kerr nonlinearity was also observed to be varied with the laser wavelength. By employing a femtosecond time-resolved optical Kerr effect (OKE) technique, the relaxation time of OKE in the ITO films is determined to be ∼ 1 ps. These findings suggest that the Kerr nonlinearity in ITO can be tailored by controlling the carrier concentration, which should be highly desirable in optoelectronic devices for ultrafast all-optical switching.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/s00340-005-2079-8
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1007/s00340-005-2079-8
dc.description.sourcetitleApplied Physics B: Lasers and Optics
dc.description.volume82
dc.description.issue3
dc.description.page439-442
dc.description.codenAPBOE
dc.identifier.isiut000235120200018
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