Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/11/23/309
DC FieldValue
dc.titleBoundary effects on the resonant coupling of the excitation modes of semiconductor quantum wells
dc.contributor.authorGuo, Q.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorPoon, H.C.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-10-16T09:16:59Z
dc.date.available2014-10-16T09:16:59Z
dc.date.issued1999-06-14
dc.identifier.citationGuo, Q., Feng, Y.P., Poon, H.C., Ong, C.K. (1999-06-14). Boundary effects on the resonant coupling of the excitation modes of semiconductor quantum wells. Journal of Physics Condensed Matter 11 (23) : 4557-4574. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/11/23/309
dc.identifier.issn09538984
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/95886
dc.description.abstractAn alternative approach based on the invariant imbedding method and the random phase approximation is used to study the excitation spectra of both neutral and parabolic quantum wells. Compared to other methods, this approach is efficient and leads to more stable solutions. It also provides a convenient way for studying boundary effects. The calculated excitation spectra for both types of quantum well agree well with experimental observations and previous calculations. The effects of the boundary condition on the excitation spectra were extensively studied. It was found that the positions and relative strengths of resonant peaks are sensitive to the boundary condition. The evolution of some of the resonant peaks can be attributed to the coupling between collective plasma modes and the intersubband transitions.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1088/0953-8984/11/23/309
dc.description.sourcetitleJournal of Physics Condensed Matter
dc.description.volume11
dc.description.issue23
dc.description.page4557-4574
dc.description.codenJCOME
dc.identifier.isiut000080924600012
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